High-Temperature Thin-Film Strain Sensor

Abstract

The present disclosure relates to the field of strain sensors, and specifically relates to a high-temperature thin-film strain sensor, including a substrate and a strain-sensitive grid. The strain-sensitive grid includes an indium tin oxide layer and a platinum layer, the indium tin oxide layer is deposited on the substrate, and the platinum layer is deposited on the indium tin oxide layer. The indium tin oxide layer contains 50% by mass of indium oxide and 50% by mass of tin oxide. The high-temperature thin-film strain sensor provided by the present disclosure can be used in an environment from room temperature to 500° C., and have extremely high sensitivity at a high temperature of 500° C. Unlike the conventional metal foil strain gauge with a thickness of several microns, the high-temperature thin-film strain grid has a thickness of 500 nm, which can better convey the strain of the measured object at high temperature.

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