Vapor deposition apparatus and substrate treatment method

A vapor deposition apparatus, comprising:

• a reaction chamber, configured to perform a vapor deposition process;
• a base assembly, arranged at the bottom of the reaction chamber and comprising a central area for carrying a substrate and a peripheral area surrounding the central area, the base assembly being capable of moving between a high position and a low position;
• a shower head, arranged opposite to the base assembly and at the top of the reaction chamber and configured to introduce a plurality of fabrication gases, a reaction space being formed between a lower surface of the shower head and an upper surface of the central area of the base assembly;
• a first pumping channel, surrounding the reaction space and formed between the peripheral area of the base assembly and the lower surface of the shower head when the base assembly is located at the high position;
• and
• a second pumping channel, surrounding the first pumping channel, wherein the conductance of the second pumping channel is greater than that of the first pumping channel, so that the fabrication gases are emitted after being subjected to two-stage choke of the first pumping channel and the second pumping channel;
• and
• when the base assembly is located at the low position, the fabrication gases are emitted after being subjected to one-stage choke of the second pumping channel.