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US 2024/0392218 A1Published application
Cleaning liquid, method of cleaning substrate, and method of manufacturing semiconductor element
AssigneeTokyo Ohka Kogyo Co., Ltd.
InventorsKohei SERIZAWA, Emi UCHIDA
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Abstract
A cleaning liquid for removing an etching residue containing a titanium component, the cleaning liquid including a compound represented by General Formula (a1) below, in which the cleaning liquid has a pH of 6 or greater, which is measured at 23° C., in which R represents an organic group or a hydrogen atom
Claims16
A cleaning liquid for removing an etching residue containing a titanium component, the cleaning liquid comprising:
- a compound (A) represented by General Formula (a1),
- wherein the cleaning liquid has a pH of 6 or greater which is measured at 23° C.,
- wherein R represents an organic group or a hydrogen atom.
Dependencies are inferred from the claim text.