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US 2024/0392192 A1Published application
Etching gas composition and method of manufacturing integrated circuit device by using the same
AssigneeSemes Co., Ltd.
InventorsKyungseok MIN, Jinyoung KIM, Youngmoon KIM, Sooryun RO, Jisoo OH, Kwangbae KIM, Chulhee LEE
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Abstract
An etching gas composition includes an organic fluorine compound and tungsten fluoride.
Claims20
An etching gas composition comprising:
- an organic fluorine compound;
- and
- tungsten fluoride.
An etching gas composition comprising:
- an organic fluorine compound including aliphatic hydrocarbon having 3 to 10 carbon atoms, in which at least one of hydrogen atoms bonded to carbon is replaced with a fluorine atom;
- tungsten fluoride;
- an inert gas;
- and
- a reactive gas.
2 more elements
A method of manufacturing an integrated circuit device, the method comprising:
- alternately stacking a plurality of insulating layers and a plurality of sacrificial layers one by one on a substrate;
- forming a stepped structure by removing one end of each of the plurality of insulating layers and the plurality of sacrificial layers;
- forming an insulating block covering the stepped structure;
- replacing the plurality of sacrificial layers with a plurality of gate stacks;
- forming an insulating layer on the insulating block;
- forming an etching mask on the insulating layer;
- forming a contact hole by etching the insulating block and the insulating film through the etching mask by using plasma obtained from an etching gas composition;
- and
- removing the etching mask, wherein the etching gas composition includes:
- an organic fluorine compound;
- and tungsten fluoride.
8 more elements
Dependencies are inferred from the claim text.