A method of operating a memory device, the memory device including a first data pin configured to communicate a data signal, a second data pin for communicating a read data strobe signal, a first on-die termination (ODT) circuit connected to the first data pin, the first ODT circuit configured to provide a first termination resistance through the first data pin, a second ODT circuit connected to the second data pin, and the second ODT circuit configured to provide a second termination resistance through the second data pin, the method comprising:
- receiving a read command;
- and
- asynchronously controlling the first ODT circuit and the second ODT circuit in response to receiving the read command.