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US 2024/0387690 A1Published application
Electroless Plating Method for Metal Gate Fill
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsin-Yi Lee, Chi On Chui
Life of this patent
Estimating the term…
Abstract
Embodiments utilize an electro-chemical process to deposit a metal gate electrode in a gate opening in a gate replacement process for a nanosheet FinFET device. Accelerators and suppressors may be used to achieve a bottom-up deposition for a fill material of the metal gate electrode.
Claims21
(canceled)
A method comprising:
- forming a recess in one or more material layers;
- and
- plating a metal into the recess using an aqueous plating solution, the metal filling up the recess, the aqueous plating solution comprising suppressors, wherein the suppressors are more densely distributed at sidewalls of the recess than at a bottom of the recess during plating the metal.
A method comprising:
- forming an opening in one or more material layers over a substrate, the opening having a height-to-width ratio between 10:1 and 20:1 in a cross-sectional view;
- and
- placing the substrate with the one or more material layers into a chemical bath to plate a metal fill in the opening, the chemical bath including suppressors and accelerators, wherein a ratio of accelerators to suppressors at a bottom of the opening may be between 10:1 to 100:1.
A method comprising:
- forming an opening in one or more material layers on a substrate;
- and
- placing the substrate with the one or more material layers into a chemical bath to plate a metal fill in the opening, the chemical bath including metal ions, a reducing agent, suppressors and accelerators, wherein a ratio of accelerators to suppressors at a bottom of the opening may be between 10:1 to 100:1, wherein a ratio of suppressors to the accelerators on a sidewall of the opening at a midpoint between a top of the opening and a bottom of the opening is in a range of 10:1 to 50:1.
Dependencies are inferred from the claim text.