SiC CRYSTAL SUBSTRATE, METHOD OF MANUFACTURING SiC CRYSTAL SUBSTRATE, SiC EPITAXIAL SUBSTRATE, AND METHOD OF MANUFACTURING SiC EPITAXIAL SUBSTRATE
AssigneeSumitomo Electric Industries, Ltd.
InventorsIssei SATOH, Shigeaki UEMURA, Shin HARADA
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Abstract
In an X-ray photoelectron spectrum under conditions of incident X-ray energy of 250 eV and a photoelectron take-off angle of 45 degree, when a sum of an area of Si 2p1/2 spectrum and an area of Si 2p3/2 spectrum is 1, a sum of an area of a Si2+ spectrum, an area of a Si3+ spectrum, and an area of a Si4+ spectrum is smaller than 1.8.
Claims13
An SiC crystal substrate, wherein in an X-ray photoelectron spectrum under conditions of incident X-ray energy of 250 eV and a photoelectron take-off angle of 45 degrees,
- when a sum of an area of a Si 2p1/2 spectrum and an area of a Si 2p3/2 spectrum is 1, a sum of an area of a Si2+ spectrum, an area of a Si3+ spectrum, and an area of a Si4+ spectrum is smaller than 1.8.
An SiC crystal substrate, wherein in an X-ray photoelectron spectrum under conditions of incident X-ray energy of 100 eV and a photoelectron take-off angle of 45 degrees,
- when a sum of an area of a Si 2p1/2 spectrum and an area of a Si 2p3/2 spectrum is 1, a sum of an area of a Si2+ spectrum, an area of a Si3+ spectrum, and an area of a Si4+ spectrum is smaller than 4.1.
A method of manufacturing an SiC crystal substrate, the method comprising:
- performing chemical mechanical polishing on an SiC substrate;
- and
- applying, after the performing chemical mechanical polishing, a beam of a cluster of noble gas ions to a surface of the SiC substrate.
An SiC epitaxial substrate comprising:
- an SiC crystal substrate;
- and
- an SiC epitaxial film disposed on the SiC crystal substrate,
- wherein an area ratio of a polycrystal region in a surface of the SiC epitaxial film is less than 10%.
Dependencies are inferred from the claim text.