Methods for making semiconductor devices including localized semiconductor-on-insulator (soi) regions

A method for making a semiconductor device comprising:

• forming a plurality of buried spaced-apart oxide (BOX) regions in a semiconductor substrate;
• forming a monocrystalline semiconductor layer on the semiconductor substrate defining respective localized semiconductor on insulator (SOI) regions above the BOX regions, and respective localized bulk semiconductor regions laterally between adjacent SOI regions;
• forming a superlattice in the monocrystalline semiconductor layer, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
• forming a plurality of semiconductor devices in the monocrystalline layer, with at least some of the semiconductor devices in the localized SOI regions, and at least some other semiconductor devices in the localized bulk semiconductor regions;
• and
• forming a plurality of spaced-apart isolated oxide regions in the monocrystalline semiconductor layer.

A method for making a semiconductor device comprising:

• forming a plurality of buried spaced-apart oxide (BOX) regions in a semiconductor substrate;
• forming a monocrystalline semiconductor layer on the semiconductor substrate defining respective localized semiconductor on insulator (SOI) regions above the box regions, and respective localized bulk semiconductor regions laterally between adjacent SOI regions;
• forming a superlattice in the monocrystalline semiconductor layer, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
• forming a plurality of semiconductor devices in the monocrystalline layer, with at least some of the semiconductor devices in the localized SOI regions, and at least some other semiconductor devices in the localized bulk semiconductor regions;
• and
• forming a plurality of optical waveguides in the monocrystalline semiconductor layer.