Radiation-emitting semiconductor body, laser diode and light-emitting diode

A radiation emitting semiconductor body comprising:

• a first semiconductor region of a first doping type comprising a first material composition,
• a second semiconductor region of a second doping type comprising a second material composition,
• an active region arranged between the first semiconductor region and the second semiconductor region,
• a first intermediate region arranged between the first semiconductor region and the active region, and
• a second intermediate region arranged between the second semiconductor region and the active region, wherein
• the active region comprises a plurality of quantum well layers and a plurality of barrier layers which are arranged alternately above each other,
• the barrier layers comprise a third material composition,
• the first intermediate region comprises at least one first blocking layer and at least one first intermediate layer,
• the first blocking layer comprises a fourth material composition and the first intermediate layer comprises a fifth material composition,
• the second intermediate region comprises at least one second blocking layer and at least one second intermediate layer,
• the second blocking layer comprises a sixth material composition and the second intermediate layer comprises a seventh material composition,
• all material compositions are based on AlGaInP, and
• a thickness of the first intermediate region is at most 30 nm.