Semiconductor structure and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSHU-WEI LI, YU-CHEN CHAN, MENG-PEI LU, SHIN-YI YANG, MING-HAN LEE
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Abstract
A semiconductor structure and method of manufacturing a semiconductor structure are provided. The semiconductor structure comprises at least one two-dimensional (2D) conductive structure; a dielectric structure disposed on the 2D conductive structure; and at least one interconnect structure disposed in the dielectric layer and extending into the 2D conductive structure. The interconnect structure laterally contacts the 2D conductive structure.
Claims20
A semiconductor structure, comprising:
- at least one two-dimensional (2D) conductive structure;
- a dielectric structure disposed on the 2D conductive structure;
- and
- at least one interconnect structure disposed in the dielectric structure and extending into the 2D conductive structure, wherein the interconnect structure laterally contacts the 2D conductive structure.
A method of manufacturing a semiconductor structure, comprising:
- stacking a dielectric structure on a 2D conductive structure;
- forming openings through the dielectric structure, wherein the openings extend into the 2D conductive structure;
- and
- filling the openings with 3D materials, so that the 3D materials laterally contact the 2D conductive structure.
A semiconductor structure, comprising:
- a two-dimensional (2D) conductive structure;
- a dielectric structure disposed on the 2D conductive structure;
- at least one interconnect structure disposed in the dielectric structure and extending into the 2D conductive structure, wherein at least a portion of sidewalls of the at least one interconnect structure laterally contacts the 2D conductive structure;
- and
- an isolation structure adjacent to the 2D conductive structure, wherein the at least one interconnect structure is separated from the isolation structure.
Dependencies are inferred from the claim text.