US 2024/0363162 A1 · Methods for Reading Resistive States of Resistive Change Elements

Abstract

The present disclosure generally relates to multi-switch storage cells (MSSCs), three-dimensional MSSC arrays, and three-dimensional MSSC memory. Multi-switch storage cells include a cell select device, multiple resistive change elements, and an intracell wiring electrically connecting the multiple resistive change elements together and to the cell select device. MSSC arrays are designed (architected) and operated to prevent inter-cell (sneak path) currents between multi-switch storage cells, which prevents stored data disturb from adjacent cells and adjacent cell data pattern sensitivity. Additionally, READ and WRITE operations may be performed on one of the multiple resistive change elements in a multi-switch storage cell without disturbing the stored data in the remaining resistive change elements. However, controlled parasitic currents may flow in the remaining resistive change elements within the cell. Isolating each multi-switch storage cell in a three-dimensional MSSC array, enables in-memory computing for applications such as data processing for machine learning and artificial intelligence.

Claims31

Dependent claims

A method for reading a resistive state of a resistive change element of a resistive change element cell of a resistive change element cell array, said method comprising:

selecting a resistive change element of a resistive change element cell of a plurality resistive change element cells of a resistive change element cell array, wherein each resistive change element cell comprises:
a resistive change element in electrical communication with a select line of a plurality of select lines of said resistive change element cell array;
a cell select device in electrical communication with a bit line of a plurality of bit lines of said resistive change element cell array and a word line of a plurality of word lines of said resistive change element cell array;
and
an intracell wiring electrically connecting said resistive change element and said cell select device;
charging a bit line in electrical communication with said resistive change element cell through said resistive change element cell;
and
determining a resistive state of said selected resistive change element based on a voltage on said bit line in electrical communication with said resistive change element cell and a first voltage.

5 more elements

A method for reading a resistive state of a resistive change element of a multi-switch storage cell of a multi-switch storage cell array, said method comprising:

selecting a resistive change element of a multi-switch storage cell of a plurality of multi-switch storage cells of a multi-switch storage cell array, wherein each multi-switch storage cell comprises:
a plurality of resistive change elements, wherein each resistive change element is in electrical communication with a select line of a group of multiple select lines of a plurality of groups of multiple select lines of said multi-switch storage cell array;
a cell select device in electrical communication with a bit line of a plurality of bit lines of said multi-switch storage cell array and a word line of a plurality of word lines of said multi-switch storage cell array;
and
an intracell wiring electrically connecting said plurality of resistive change elements together and to said cell select device;
charging a bit line in electrical communication with said multi-switch storage cell through said multi-switch storage cell;
and
determining a resistive state of said selected resistive change element based on a voltage on said bit line in electrical communication with said multi-switch storage cell and a first voltage.

5 more elements

Dependencies are inferred from the claim text.

Methods for Reading Resistive States of Resistive Change Elements

Life of this patent

Methods for Reading Resistive States of Resistive Change Elements

Life of this patent

Abstract

Claims31