Planar passivation layers

A method of making a semiconductor device, comprising:

• forming a conductive feature in a substrate;
• forming a first isolation layer over a top surface of the substrate;
• forming an intermediate conductive structure in the first isolation layer, wherein a top surface of the intermediate conductive structure is coplanar with a top surface of the first isolation layer;
• forming a first conductive structure protruding to a height from a top surface of the first isolation layer, the first conductive structure in conductive communication with the conductive feature, wherein the first conductive structure is formed on and in contact with at least a first portion of the top surface of the first isolation layer and at least a first portion of the top surface of the intermediate conductive structure;
• forming a first passivation layer in direct contact and conformal with at least a second portion of the top surface of the first isolation layer and a second portion of the top surface of the intermediate conductive structure, wherein the first conductive structure is in direct contact with a portion of a top surface of the first passivation layer;
• and
• forming a second passivation layer overlaying the first conductive structure by a first thickness, and overlaying the first passivation layer by a second thickness that comprises the first thickness and the height.

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a first isolation layer over a top surface of a substrate;
• forming an intermediate conductive structure in the first isolation layer;
• forming a protruding conductive structure on and in contact with at least a portion of the top surface of the first isolation layer and at least a portion of the top surface of the intermediate conductive structure, wherein the protruding conductive structure protrudes to a height above the top surface of the first isolation layer;
• forming a first passivation layer on in direct contact with at least a portion of the top surface of the first isolation layer and at least a portion of the top surface of the intermediate conductive structure, wherein the protruding conductive structure is in direct contact with a portion of a top surface of the first passivation layer;
• and
• forming a second passivation layer on and in direct contact with and overlaying the protruding conductive structure by a first thickness, the second passivation layer in direct contact with and overlaying the first passivation layer by a second thickness greater than the first thickness.