Fundamentals of semi-conductor-based photon counting detectors

A treatment apparatus, comprising:

• a first source of radiation configured to emit imaging x-ray radiation after pausing for a time interval between periodic emissions;
• and
• a radiation detector configured to receive x-ray radiation from the first radiation source and generate tomographic data from the received radiation, wherein:
• the radiation detector is subject to a transient effect caused by at least one of polarization and charge trapping;
• the time interval is sufficiently long for the transient effect to substantially dissipate;
• the radiation detector comprises a semiconductor material;
• a bias voltage is provided to the semiconductor material when the radiation detector is receiving x-ray radiation;
• and
• the bias voltage is modified during the time interval between periodic emissions to facilitate dissipation of the transient effect.

A treatment method, comprising:

• receiving, via a radiation detector, imaging x-ray radiation from a first radiation source, the first radiation source configured to emit the imaging x-ray radiation after pausing for a time interval between periodic emissions, wherein:
• the radiation detector is subject to a transient effect caused by at least one of polarization and charge trapping;
• the time interval is sufficiently long for the transient effect to substantially dissipate;
• and
• the radiation detector comprises a semiconductor material;
• providing a bias voltage to the semiconductor material when the radiation detector is receiving x-ray radiation from the first radiation source;
• and
• modifying the bias voltage during the time interval between periodic emissions to facilitate dissipation of the transient effect.