Solid-state imaging device and electronic device
AssigneeSony Semiconductor Solutions Corporation
InventorsTomohiko Shibata, Kiyoshige Tsuji
Life of this patent
Estimating the term…
Abstract
An image sensor (102) includes a photoelectric conversion unit (10) that generates a photoelectric charge, a sense node (SN) (21) that is connected to the photoelectric conversion unit (10) and holds the photoelectric charge generated by the photoelectric conversion unit (10), a discharge transistor (15) for discharging the photoelectric charge held by the sense node (SN) (21) to the outside, and a voltage control unit (114) that controls a voltage value of an off voltage to be applied to a gate of the discharge transistor (15) when the discharge transistor (15) is turned off.
Claims8
(canceled)
A light detecting device comprising:
- a photoelectric conversion unit;
- a first charge holding unit coupled to the photoelectric conversion unit;
- a first transistor coupled to the first charge holding unit;
- a voltage control circuit coupled to the first charge holding unit;
- a second transistor coupled to the first charge holding unit;
- a second charge holding unit coupled to the second transistor;
- a third transistor coupled to the second charge holding unit;
- a fourth transistor coupled to the second charge holding unit, and
- a fifth transistor coupled to the fourth transistor,
- wherein the first transistor is a P-type metal oxide semiconductor (MOS) transistor.
Dependencies are inferred from the claim text.