Low-k ald gap-fill methods and material

A method of forming low dielectric-constant (low-k) films, the method comprising:

• depositing, by atomic-layer deposition (ALD) techniques, a film-deposition layer;
• doping the film-deposition layer with fluorine;
• depositing, by atomic-layer deposition techniques, a subsequent film-deposition layer;
• and
• repeating the deposition operations and the doping operations as needed to obtain a final film thickness of a film having a low dielectric constant, the low-k films comprising at least one material selected from materials including fluorine-doped silicon oxide (SiOF), carbonofluoridoylsilicon (SiOCF), and fluorinated silicon oxynitride (SiONF).

A method of forming a low dielectric-constant (low-k) film, the method comprising:

• introducing a silane precursor into a reaction chamber;
• depositing, by an atomic-layer deposition (ALD) process, at least a first layer of film;
• oxidizing and cleaning the first layer of film;
• and
• doping the first layer of film with a fluorine-based dopant material, the low-k film comprising at least one material selected from materials including fluorine-doped silicon oxide (SiOF), carbonofluoridoylsilicon (SiOCF), and fluorinated silicon oxynitride (SiONF).

A method of forming a low dielectric-constant (low-k) silicon-oxide film, the method comprising:

• depositing, by atomic-layer deposition (ALD) techniques, a film-deposition layer;
• doping the film-deposition layer with a halide;
• selecting the halide to comprise at least one material selected from materials including iodine and bromine;
• and
• depositing, by atomic-layer deposition (ALD) techniques, a subsequent film-deposition layer of silicon oxide.

A method of forming a low dielectric-constant (low-k) film, the method comprising:

• modulating a film thickness by atomic-layer deposition (ALD) techniques, in a layer-by-layer film-deposition process;
• doping each deposited film layer with dopant material selected from at least one dopant material comprising fluorine and a halide;
• depositing, by atomic-layer deposition (ALD) techniques, a subsequent film-deposition layer;
• and
• repeating the deposition operations and the doping operations as needed to obtain a final film thickness of the low-k film, the low-k film comprising at least one material selected from materials including fluorine-doped silicon oxide (SiOF), carbonofluoridoylsilicon (SiOCF), and fluorinated silicon oxynitride (SiONF).