Polarisation converter and method of fabrication
AssigneeSmart Photonics Holding B.V.
InventorsMadeleine NILSEN, Alonso Jesús MILLÁN-MEJÍA, Ludovicus Marie AUGUSTIN
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Abstract
A polarisation converter for a photonic integrated circuit. The polarisation converter comprises a first semiconductor layer, a second semiconductor layer and a third semiconductor layer. The second semiconductor layer comprises, when viewed in a cross-sectional plane perpendicular a light propagation axis, a first portion thicker than a second portion. The second semiconductor layer is between, and in contact with, the first semiconductor layer and the third semiconductor layer.
Claims20
A polarisation converter for a photonic integrated circuit, comprising:
- a first semiconductor layer;
- a second semiconductor layer comprising, when viewed in a cross-sectional plane perpendicular a light propagation axis, a first portion thicker than a second portion of the second semiconductor layer;
- and
- a third semiconductor layer, the second semiconductor layer between, and in contact with, the first semiconductor layer and the third semiconductor layer.
A photonic integrated circuit comprising:
- a polarisation converter comprising:
- a first semiconductor layer;
- a second semiconductor layer comprising, when viewed in a cross-sectional plane perpendicular a light propagation axis, a first portion thicker than a second portion of the second semiconductor layer;
- and
- a third semiconductor layer, the second semiconductor layer between, and in contact with, the first semiconductor layer and the third semiconductor layer.
A method of fabricating a polarisation converter for a photonic integrated circuit, comprising:
- forming a first semiconductor layer;
- forming a pre-cursor layer for forming a second semiconductor layer on the first semiconductor layer;
- forming a third semiconductor layer on the pre-cursor layer;
- and
- after forming the third semiconductor layer on the pre-cursor layer, and to form the second semiconductor layer between and in contact with the first semiconductor layer and the third semiconductor layer, removing a first portion of the pre-cursor layer from a first side of the pre-cursor layer, without removing a second portion of the pre-cursor layer from a second side of the pre-cursor layer, to form a first surface of the second semiconductor layer such that, when viewed in a cross-sectional plane perpendicular a light propagation axis of the polarisation converter, a first portion of the second semiconductor layer is thicker than a second portion of the second semiconductor layer.
Dependencies are inferred from the claim text.