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AssigneeRohm Co., Ltd.
InventorsTatsuya YANAGI, Hirotaka OTAKE, Hiroyuki SAKAIRI, Naotaka KURODA
Estimating the term…
A method for measuring a current-voltage characteristic (Id-Vds characteristic) representing the relationship between the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage) of a transistor M1 includes setting the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage), measuring the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig of the transistor M1 in a switching transient state, and acquiring the current-voltage characteristic (Id-Vds characteristic) of the transistor M1 based on the measurement results of the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig.
A method for measuring a current-voltage characteristic representing a relationship between a drain current Id and a drain-source voltage Vds of a transistor, the method comprising:
A method for creating a device model of a transistor using an I-V relation between a drain current Id and a drain-source voltage Vds of the transistor, the method comprising:
Dependencies are inferred from the claim text.