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US 2024/0322019 A1Published application
Electronic components employing field ionization
AssigneePsiquantum, Corp.
InventorGary Gibson
Life of this patent
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Abstract
A method of operating a bipolar transistor having a source, a drain, and a channel electrically coupled to the source and the drain includes applying a bias voltage to a gate electrically coupled to the channel, increasing a conductivity of the channel via field ionization in response to applying the bias voltage, and conducting current from the source to the drain
Claims21
A bipolar diode comprising:
- a first contact;
- a doped semiconductor region electrically coupled to the first contact;
- and
- a second contact electrically coupled to the doped semiconductor region.
1 more element
A method of operating a bipolar diode, the method comprising:
- providing a doped semiconductor structure having a first contact, a second contact, and a doped semiconductor region electrically connected to the first contact and the second contact;
- reducing a temperature of the doped semiconductor structure to an operating temperature, wherein dopant atoms in the doped semiconductor region are characterized by a doping density such that a majority of the dopant atoms freeze out at temperatures less than the operating temperature;
- applying a voltage bias between the first contact and the second contact;
- generating a predetermined carrier concentration in the doped semiconductor region in response to applying the bias voltage;
- and
- conducting current from the first contact to the second contact.
3 more elements
-93. (canceled)
Dependencies are inferred from the claim text.