Thin photodetector device and fabrication thereof

A method for fabricating a photodetector device, the method comprising:

• providing a carrier substrate, wherein a device layer is arranged at a main surface of the carrier substrate, and an insulating layer is arranged between the device layer and the carrier substrate;
• forming a plurality of photodetector elements in the device layer;
• forming an intermetal dielectric on the device layer, wherein contact pads electrically connected to the photodetector elements are embedded in the intermetal dielectric;
• forming pad openings in the intermetal dielectric, the pad openings reaching the contact pads so that the contact pads are accessible via the pad openings;
• mounting a handling substrate on the intermetal dielectric;
• removing the carrier substrate;
• singulating the plurality of photodetector elements such that a plurality of separate photodetector chips comprising one photodetector element are formed;
• releasing the photodetector chips from the handling substrate;
• and
• transferring the photodetector chips on a target substrate comprising a main surface such that the intermetal dielectrics face the main surface of the target substrate.

A photodetector device comprising:

• a target substrate having a main surface;
• a plurality of separate photodetector chips, wherein each photodetector chip comprises a device layer that is arranged at a backside of the photodetector chip, and wherein a photodetector element is arranged in the device layer;
• and
• an intermetal dielectric arranged at a front side of the photodetector chip, wherein contact pads electrically connected to the photodetector element are embedded in the intermetal dielectric and accessible via pad openings in the intermetal dielectric,
• wherein each photodetector chip is mounted on the target substrate such that the front side of the photodetector chip faces the main surface of the target substrate.