Metal oxide film, semiconductor device, and method for evaluating metal oxide film

Abstract

A metal oxide film with high electrical characteristics is provided. A metal oxide film with high reliability is provided. The metal oxide film contains indium, M (M is aluminum, gallium, yttrium, or tin), and zinc. In the metal oxide film, distribution of interplanar spacings d determined by electron diffraction by electron beam irradiation from a direction perpendicular to a film surface of the metal oxide film has a first peak and a second peak. The top of the first peak is positioned at greater than or equal to 0.25 nm and less than or equal to 0.30 nm, and the top of the second peak is positioned at greater than or equal to 0.15 nm and less than or equal to 0.20 nm. The distribution of the interplanar spacings d is obtained from a plurality of electron diffraction patterns of a plurality of regions of the metal oxide film. The electron diffraction is performed using an electron beam with a beam diameter of greater than or equal to 0.3 nm and less than or equal to 10 nm.

Dependencies are inferred from the claim text.