Glass substrate for high-frequency device and circuit board for high-frequency device
AssigneeAGC Inc.
InventorsKazutaka ONO, Shuhei NOMURA, Nobutaka KIDERA, Nobuhiko TAKESHITA
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Abstract
A glass substrate for a high-frequency device, which contains, in terms of mole percent on the basis of oxides: 40 to 75% of SiO2; 0 to 15% of Al2O3; 13 to 23% of B2O3; 2.5 to 11% of MgO; and 0 to 13% of CaO, and having a total content of alkali metal oxides in the range of 0.001-5%, where at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.
Claims11
A glass substrate for a high-frequency device, the glass comprising, in terms of mole percent on the basis of oxides:
- 40 to 75% of SiO2;
- 0 to 10% of Al2O3;
- 13 to 36% of B203:
- 0.1 to 9% of CaO, and
- having a total content of Al2O3 and B2O3 in the range of 13-40%
- having a total content of alkaline earth metal oxides in the range of 0.1-13%,
- having a total content of alkali metal oxides in the range of 0.001-5%,
- having a molar ratio represented by Al2O3/(Al2O3+B2O3) in the range of 0-0.45,
- wherein at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.
Dependencies are inferred from the claim text.