Mask absorber layers for extreme ultraviolet lithography
AssigneeThe Regents of the University of California
InventorDaniel Staaks
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Abstract
This disclosure provides systems, methods, and apparatus related to extreme ultraviolet lithography. In one aspect, a method of fabricating a mask for extreme ultraviolet lithography includes providing a structure, depositing an absorber layer over the reflective layer, and patterning the absorber layer. The structure includes a substrate and a reflective layer disposed over the substrate. The absorber layer comprises A and B. A is chromium (Cr) or vanadium (V). B is silver (Ag), indium (In), cobalt (Co), antimony (Sb), tin (Sn), or tellurium (Te). Patterning the absorber layer includes etching the absorber layer to remove the absorber layer in a first region while leaving the absorber layer in a second region. The etching is performed at a temperature of about −80° C. to 0° C.
Claims20
A method of fabricating a mask for lithography, comprising:
- providing a structure, the structure comprising:
- a substrate, and
- a reflective layer disposed over the substrate;
- depositing an absorber layer over the reflective layer, the absorber layer comprising A and B, wherein A is chromium (Cr) or vanadium (V), and wherein B is silver (Ag), indium (In), cobalt (Co), antimony (Sb), tin (Sn), or tellurium (Te);
- and
- patterning the absorber layer, the patterning including etching the absorber layer to remove the absorber layer in a first region while leaving the absorber layer in a second region, the etching being performed at a temperature of about −80° C. to 0° C.
An extreme ultraviolet mask comprising:
- a substrate;
- a reflective layer disposed over the substrate;
- and
- an absorber layer disposed over the reflective layer, the absorber layer comprising A and B, wherein A is chromium (Cr) or vanadium (V), and wherein B is silver (Ag), indium (In), cobalt (Co), antimony (Sb), tin (Sn), or tellurium (Te).
Dependencies are inferred from the claim text.