A semiconductor substrate manufacturing apparatus, comprising:
- a first fixing stage that exposes a first surface of a first substrate formed by cutting out a semiconductor crystal containing at least Si and C along a plane that is inclined with respect to a horizontal plane perpendicular to a crystal growth direction of the semiconductor crystal, and fixes thereto a second surface that is on an opposite side from the first surface;
- an etching apparatus that etches the first surface of the first substrate fixed to the first fixing stage to form a plurality of terrace portions that are surfaces along a first direction parallel to the horizontal plane of the first substrate, and a step portion having a predetermined height and positioned between two adjacent terrace portions in the first direction;
- a first semiconductor layer forming apparatus for forming a first semiconductor layer having a critical film thickness or more on the first surface of the first substrate;
- an annealing apparatus for heating the first substrate on which the first semiconductor layer is formed and vaporizing a portion of Si of the first substrate from a part of the step portion exposed from the first semiconductor layer, thereby forming a buffer layer having at least one graphene layer in at least a part between the first semiconductor layer and the first substrate;
- a first transport path that connects a chamber for housing the first substrate of the first semiconductor layer forming apparatus and a chamber for housing the first substrate of the annealing apparatus;
- and
- a control part that controls the first fixing stage, the etching apparatus, the first semiconductor layer forming apparatus, and the annealing apparatus, wherein
- a substrate transport mechanism is provided in the chamber for housing the first substrate of the first semiconductor layer forming apparatus;
- the chamber for housing the first substrate of the annealing apparatus;
- and the first transport path, and the substrate transport mechanism allows the first substrate fixed to the first fixing stage to be movable between the chamber of the first semiconductor layer forming apparatus and the chamber of the annealing apparatus,
- the etching apparatus is provided inside the first semiconductor layer forming apparatus,
- the control part at least has a function of controlling steps of:
- moving the first substrate from the first fixing stage to which the first substrate is fixed;
- forming the plurality of terrace portions and the step portion on the first substrate;
- forming the first semiconductor layer such that a part of the step portion is exposed;
- and forming the buffer layer after the forming the first semiconductor layer, and
- a predetermined height of the step portion is larger than a critical film thickness of the first semiconductor layer obtained by growing crystals on the first surface of the first substrate.