Methods of growing single crystal ingots using susceptor assembly with sacrifice ring

A method of producing a single crystal semiconductor ingot from a melt, the method comprising:

• installing a sacrifice ring onto a susceptor base such that the sacrifice ring surrounds an annular wall of the susceptor base extending from an upper edge to a shoulder;
• connecting a tubular sidewall to the susceptor base by inserting the annular wall of the susceptor base into the sidewall such that the sidewall engages the sacrifice ring and the sacrifice ring is interposed between the sidewall and each of the annular wall and the shoulder, thereby forming a susceptor assembly;
• positioning a crucible in an interior of the susceptor assembly defined by the susceptor base and the sidewall;
• adding polycrystalline semiconductor material to the crucible;
• heating the polycrystalline semiconductor material to cause a melt to form in the crucible;
• pulling a single crystal semiconductor ingot from the melt, wherein reaction products are generated and accumulate on the sacrifice ring during the pulling the single crystal semiconductor ingot from the melt;
• and
• after the pulling the single crystal semiconductor ingot from the melt, removing the sacrifice ring having the accumulated reaction products from the susceptor base.