Plating method and plating apparatus
AssigneeTokyo Electron Limited
InventorsTakeshi Nagao, Yuichiro Inatomi, Kazutoshi Iwai
Life of this patent
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Abstract
A plating method includes a preparation process; a first plating process; and a second plating process. In the preparation process, a substrate W having a seed layer 132 of cobalt or a cobalt alloy formed in a recess is prepared. In the first plating process, a displacement plating processing is performed on the substrate W to replace a surface layer of the seed layer 132 with copper by using a first plating liquid L1 containing a copper ion. In the second plating process, after the first plating process, a reduction plating processing is performed on the recess of the substrate W by using a second plating liquid L2 containing a copper ion and a reducing agent.
Claims11
A plating method, comprising:
- preparing a substrate having a seed layer of cobalt or a cobalt alloy formed in a recess;
- performing a displacement plating processing on the substrate to replace a surface layer of the seed layer with copper by using a first plating liquid containing a copper ion;
- performing, after the performing of the displacement plating processing, a reduction plating processing on the recess of the substrate by using a second plating liquid containing the copper ion and a reducing agent.
A plating apparatus, comprising:
- a substrate holder configured to hold a substrate rotatably;
- a chemical liquid supply configured to supply a chemical liquid to the substrate;
- and
- a controller configured to control the substrate holder and the chemical liquid supply,
- wherein the controller holds, with the substrate holder, the substrate having a seed layer of cobalt or a cobalt alloy formed in a recess,
- the controller performs, by using a first plating liquid containing a copper ion, a displacement plating processing on the substrate to replace a surface layer of the seed layer with copper, and
- the controller performs, after the displacement plating processing, a reduction plating processing on the recess of the substrate by using a second plating liquid containing the copper ion and a reducing agent.
Dependencies are inferred from the claim text.