Artificial intelligence processing device and training inference method for artificial intelligence processing device

An artificial intelligence processing device comprising:

• a substrate;
• and
• a multiply-accumulate operation circuit that is provided on the substrate, and performs a multiply-accumulate operation,
• wherein the multiply-accumulate operation circuit includes a plurality of variable-resistance nonvolatile storage elements,
• the plurality of variable-resistance nonvolatile storage elements each include:
• a first electrode;
• a second electrode;
• and
• a variable resistance layer provided between the first electrode and the second electrode,
• the plurality of variable-resistance nonvolatile storage elements hold, as conductance, a connection weight coefficient for use in calculating a product in the multiply-accumulate operation,
• the plurality of variable-resistance nonvolatile storage elements include a first variable-resistance nonvolatile storage element and a second variable-resistance nonvolatile storage element that have different properties,
• in the first variable-resistance nonvolatile storage element, at least one of the first electrode or the second electrode is a noble metal electrode, and
• in the second variable-resistance nonvolatile storage element, at least one of the first electrode or the second electrode is a non-noble metal electrode.

An artificial intelligence processing device comprising:

• a substrate;
• and
• a multiply-accumulate operation circuit that is provided on the substrate, and performs a multiply-accumulate operation,
• wherein the multiply-accumulate operation circuit includes a first variable-resistance nonvolatile storage element and a second variable-resistance nonvolatile storage element that hold, as conductance, a connection weight coefficient for use in calculating a product in the multiply-accumulate operation, the first variable-resistance nonvolatile storage element and the second variable-resistance nonvolatile storage element having different properties,
• the first variable-resistance nonvolatile storage element has a retention property higher than a retention property of the second variable-resistance nonvolatile storage element, and
• the second variable-resistance nonvolatile storage element has an endurance property higher than an endurance property of the first variable-resistance nonvolatile storage element.