Highly physical ion resistive spacer to define chemical damage free sub 60nm mram devices

A device comprising:

• a bottom electrode;
• a stack of magnetic tunneling junction (MTJ) layers over the bottom electrode;
• first metal re-deposition layers along sidewalls of first portions of the stack of MTJ layers;
• second metal re-deposition layers along sidewalls of second portions of the stack of MTJ layers;
• a dielectric layer separating the first metal re-deposition layers from the second metal re-deposition layers;
• and
• a metal contact over the stack of the MTJ layers.

A device comprising:

• a first electrode;
• a pinned layer on the first electrode, the pinned layer having a first width;
• a barrier layer on the pinned layer, the barrier layer having the first width;
• a free layer on the barrier layer, the free layer having a second width different from the first width;
• a second electrode on the free layer, the second electrode having the second width;
• a first metal re-deposition layer on sidewalls of the barrier layer and the pinned layer;
• and
• a second metal re-deposition layer on sidewalls of the free layer and the second electrode, wherein the first metal re-deposition layer is physically separated from the second metal re-deposition layer.