N-Doped Semiconducting Material Comprising Phosphine Oxide Matrix and Metal Dopant

A process for manufacturing a semiconducting material

• the semiconducting material comprising:
• at least one metallic element as an n-dopant, and
• at least one electron transport matrix compound comprising at least one phosphine oxide group,
• wherein the at least one metallic element is selected from the group consisting of Yb, and Mn,
• the metallic element is in its substantially elemental form,
• the metallic element is present in the electrically doped semiconducting material at an amount of about 0.5% to about 25%, by weight, based on the weight of the electrically doped semiconducting material,
• and the electron transport matrix compound has a reduction potential, when measured by cyclic voltammetry under the same conditions, lower than a reduction potential of tris(2-benzo[d]thiazol-2-yl)phenoxyaluminum, and higher than a reduction potential of N2,N2,N2′,N2′,N7,N7,N7′,N7′-octaphenyl-9,9′-spirobi[fluorene]-2,2′,7,7′-tetraamine,
• the process comprising:
• coevaporating and codepositing the electron transport matrix compound comprising at least one phosphine oxide group and the metallic element.