US 2024/0297261 A1Published application

Semiconductor device

AssigneeLandmark Optoelectronics Corporation

InventorsHung-Wen HUANG, Yung-Chao CHEN, Yi-Hsiang WANG, Wei LIN

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Abstract

A semiconductor device includes a substrate, a buffer layer, a gradient layer, an active layer, a window layer, and an optical filtering layer. The substrate includes a first element and a second element. The buffer layer is disposed on the substrate. The gradient layer is formed on the buffer layer, and includes sublayers. Each sublayer includes the first, second, and third elements. For each sublayer, a lattice constant thereof is adjusted by changing a ratio of the second element to the third element. The active layer is formed on the gradient layer, and includes the first, second, and third elements. The window layer is formed on the active layer. The optical filtering layer includes the first, second, and third elements, and is formed on the window layer to block a portion of light having a wavelength in a predetermined wavelength range.

Claims15

Dependent claims

A semiconductor device, comprising:

a substrate that includes a first element and a second element;
a buffer layer disposed on said substrate;
a gradient layer formed on said buffer layer, and including a plurality of sublayers, each of said sublayers including said first element, said second element, and a third element, wherein, for each of said sublayers, a lattice constant thereof is adjusted by changing a ratio of said second element to said third element;
an active layer formed on said gradient layer, and including said first element, said second element, and said third element, a lattice constant of said active layer being greater than said lattice constant of each of said sublayers of said gradient layer;
a window layer formed on said active layer, and
an optical filtering layer including said first element, said second element, and said third element, and formed on said window layer to block a portion of light having a wavelength in a predetermined wavelength.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/593,512Filed 1 Mar 2024
Priority: TW 1121075272 Mar 2023
Published: 5 Sep 2024
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10F 77/334
For filtering or shielding light, e.g. multicolour filters for photodetectors: for shielding light, e.g. light blocking layers or cold shields for…
H10F 77/413
Optical elements or arrangements: directly associated or integrated with the devices, e.g. back reflectors
H10F 30/222
The devices having only one potential barrier, e.g. photodiodes: the potential barrier being a PN heterojunction
H10F 77/1468
Superlattices; Multiple quantum well structures: doped superlattices, e.g. N-I-P-I superlattices