Tunneling Field Effect Transistor and Manufacturing Method Thereof, Display Panel and Display Apparatus

(canceled)

(canceled)

(canceled)

A manufacturing method for a tunneling field effect transistor, comprising:

• forming a gate electrode, a tunneling field active layer, a first electrode, and a second electrode on a base substrate;
• wherein the tunneling field active layer comprises a first-type active layer and a second-type active layer that are stacked, wherein the first-type active layer comprises a first-type channel region and a first source-drain region, the second-type active layer comprises a second-type channel region and a second source-drain region, an orthographic projection of the first-type channel region on the base substrate is completely overlapped with an orthographic projection of the second-type channel region on the base substrate, the first source-drain region is located at a side of the tunneling field active layer and is connected with the first electrode, the second source-drain region is located at another side of the tunneling field active layer and is connected with the second electrode, and an orthographic projection of the gate electrode on the base substrate is located within a range of an orthographic projection of the first-type channel region and the second-type channel region on the base substrate.

(canceled)

(canceled)