Imaging element, imaging device, and method of manufacturing imaging element

An imaging device comprising:

• a pixel that includes a photoelectric conversion unit that is disposed on a side of light receiving face of a semiconductor substrate and performs photoelectric conversion on incident light, a charge holding unit that is disposed on a side different from the light receiving face of the semiconductor substrate and holds a charge generated by the photoelectric conversion, and a charge transfer unit that transfers the generated charge to the charge holding unit, the pixel being configured to have a rectangular shape in a light receiving face view;
• a charge holding unit light shielding film configured to have a band shape adjacent to three sides including a first side that is one of sides of the rectangle and parallel to the first side in a light receiving face view, being adjacent to a semiconductor region including the charge transfer unit in a light receiving face view, and being disposed in the pixel between the photoelectric conversion unit and the charge holding unit to shield incident light;
• a charge transfer unit light shielding film configured to have a band shape adjacent to three sides including a second side that is a side opposite to the first side and parallel to the second side in a light receiving face view, and configured to be disposed in the pixel between the photoelectric conversion unit and the charge transfer unit to shield incident light and have a shape which has an end portion overlapping an end portion of the charge holding unit light shielding film in a light receiving face view;
• an image signal generation unit that generates an image signal based on the held charge;
• and
• a processing circuit that processes the generated image signal.

A method of manufacturing an imaging element, the method comprising:

• a step of forming a pixel that includes a photoelectric conversion unit that is disposed on a side of a light receiving face of a semiconductor substrate and performs photoelectric conversion on incident light, a charge holding unit that is disposed on a side different from the light receiving face of the semiconductor substrate and holds a charge generated by the photoelectric conversion, and a charge transfer unit that transfers the generated charge to the charge holding unit, the pixel being configured to have a rectangular shape in a light receiving face view;
• a step of forming a charge holding unit light shielding film configured to have a band shape adjacent to three sides including a first side that is one of sides of the rectangle and parallel to the first side in a light receiving face view, being adjacent to a semiconductor region including the charge transfer unit in a light receiving face view, and being disposed in the pixel between the photoelectric conversion unit and the charge holding unit to shield incident light;
• and
• a step of forming a charge transfer unit light shielding film configured to have a band shape adjacent to three sides including a second side that is a side opposite to the first side and parallel to the second side in a light receiving face view, and configured to be disposed in the pixel between the photoelectric conversion unit and the charge transfer unit to shield incident light and have a shape which has an end portion overlapping an end portion of the charge holding unit light shielding film in a light receiving face view.