Back to results
US 2024/0282812 A1Published application
High voltage avalanche diode for active clamp drivers
AssigneeTexas Instruments Incorporated
InventorsHenry Litzmann Edwards, Joseph Maurice Khayat, Archana Venugopal
Life of this patent
Estimating the term…
Abstract
An integrated circuit includes a shallow P-type well (SPW) below a surface of a semiconductor substrate and a shallow N-type well (SNW) below the surface. The SPW forms an anode of a diode and the SNW forms a cathode of the diode. The SNW is spaced apart from the SPW by a well space region; and a thin field relief oxide structure lies over the well space region.
Claims21
An integrated circuit comprising:
- a shallow P-type well (SPW) in a semiconductor substrate, the SPW forming an anode of a diode;
- a shallow N-type well (SNW) in the semiconductor substrate and spaced apart from the SPW, the SNW forming a cathode of the diode, the SNW separated from the SPW by a well space region;
- and
- a thin field relief oxide structure at a surface of the semiconductor substrate over the well space region.
1 more element
A method of fabricating an integrated circuit comprising:
- forming a thin field relief oxide structure in a semiconductor substrate;
- forming a shallow N-type well (SNW) in the semiconductor substrate adjacent a first side of the thin field relief oxide structure;
- and
- forming a shallow P-type well (SPW) in the semiconductor substrate adjacent an opposite second side of the thin field relief oxide structure, the SNW and the SPW each having a peak dopant concentration under the thin field relief oxide structure and being spaced apart under the field relief oxide structure by the semiconductor substrate.
1 more element
Dependencies are inferred from the claim text.