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US 2024/0278285 A1Published application
Shear wave mode piezoelectric resonator
AssigneeBiomensio Ltd
InventorJyrki KAITILA
Life of this patent
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Abstract
According to an aspect, there is provided a structure for a thin-film bulk acoustic resonator. The structure comprises a substrate (101) comprising a cavity (104) having at least one slanted flat surface (103) facing away from the cavity and a piezoelectric bulk material layer (102) deposited on said at least one slanted flat surface.
Claims16
A structure for a thin-film bulk acoustic resonator comprising:
- a substrate comprising at least one cavity having at least one slanted flat surface, wherein each of said at least one slanted flat surface faces, at least in part, away from a corresponding cavity;
- and
- a piezoelectric bulk material layer deposited at least on said at least one slanted flat surface or a part thereof.
A method of manufacturing comprising:
- providing a substrate comprising silicon;
- performing anisotropic etching on the substrate using potassium hydroxide, KOH, tetra-methyl ammonium hydroxide, TMAH or ethylenediamine pyrocatechol, EDP, -based etchants so as to form at least one cavity, wherein each of said at least one cavity has at least one slanted flat surface facing, at least in part, away from that cavity;
- and
- performing sputtering to deposit a piezoelectric bulk material layer onto said at least one slanted flat surface or a part thereof.
1 more element
Dependencies are inferred from the claim text.