Layer stacks for a resistive memory element

Abstract

Structures that include a layer stack for a resistive memory element and methods of forming a structure that includes a layer stack for a resistive memory element. The structure comprises a resistive memory element including a first electrode, a second electrode, and a switching layer disposed between the second electrode and the first electrode. The first electrode includes a first layer and a second layer between the first layer and the switching layer. The switching layer has a first thickness, and the second layer of the first electrode has a second thickness that is less than the first thickness of the switching layer.

Dependencies are inferred from the claim text.