Method for producing a superconducting transistor
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsFabrice NEMOUCHI, Francois LEFLOCH, Shi-Li ZHANG, Zhen ZHANG
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AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsFabrice NEMOUCHI, Francois LEFLOCH, Shi-Li ZHANG, Zhen ZHANG
Estimating the term…
Method for producing a superconducting transistor comprising: producing a dummy gate on a first part of a semiconducting layer; producing superconducting electrodes such that the first part of the semiconducting layer comprises sides edges arranged against parts of the superconducting electrodes, and comprising a deposition of a superconducting material layer having first parts arranged against side edges of the dummy gate and second parts forming parts of the superconducting electrodes; producing lateral spacers next to the first parts of the superconducting material layer and on the second parts of the superconducting material layer; removing the dummy gate and the first parts of the superconducting material layer, creating a gate location arranged between the lateral spacers and above the first part of the semiconducting layer and above said parts of the superconducting electrodes; producing a gate in the gate location.
A method for producing a superconducting transistor, comprising at least the steps of:
Dependencies are inferred from the claim text.