Magnetic tunnel junction (mtj) having a diffusion blocking spacer layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Feng Huang, Bo-Hung Lin, Harry-Haklay Chuang, Kuei-Hung Shen, Ding-Shuo Wang, Yu-Jen Wang
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Abstract
An integrated chip including a reference magnetic layer and a barrier layer over the reference magnetic layer. A first free magnetic layer is over the barrier layer. A second free magnetic layer is over the first free magnetic layer. A spacer layer is between the first free magnetic layer and the second free magnetic layer. The spacer layer includes magnesium and a transition metal. An atomic ratio of the magnesium to the transition metal ranges from 15% to 80%.
Claims20
An integrated chip, comprising:
- a reference magnetic layer;
- a barrier layer over the reference magnetic layer;
- a first free magnetic layer over the barrier layer;
- a second free magnetic layer over the first free magnetic layer;
- and
- a spacer layer between the first free magnetic layer and the second free magnetic layer, the spacer layer comprising magnesium and a transition metal, wherein an atomic ratio of the magnesium to the transition metal ranges from 15% to 80%.
A method for forming an integrated chip, the method comprising:
- depositing a reference magnetic layer over a substrate;
- depositing a barrier layer over the reference magnetic layer;
- depositing a first free magnetic layer over the barrier layer;
- depositing a spacer layer over the first free magnetic layer, the spacer layer comprising magnesium and a transition metal, wherein an atomic ratio of the magnesium to the transition metal ranges from 15% to 80%;
- and
- depositing a second free magnetic layer over the spacer layer.
A method for forming an integrated chip, the method comprising:
- forming a magnetic tunnel junction (MTJ) over a substrate, the forming of the MTJ comprising:
- depositing a reference magnetic layer over the substrate;
- depositing a barrier layer over the reference magnetic layer;
- depositing a first free magnetic layer over the barrier layer;
- depositing a spacer layer over the first free magnetic layer, the spacer layer comprising magnesium and a transition metal;
- and
- depositing a second free magnetic layer over the spacer layer;
- and
- forming a plurality of metal interconnects over the MTJ, wherein the MTJ has a first energy barrier before the forming of the metal interconnects and a second energy barrier after the forming of the metal interconnects, and wherein a difference between the first energy barrier and the second energy barrier is less than 10%.
Dependencies are inferred from the claim text.