Display device and manufacturing method thereof

A method for manufacturing a display device comprising:

• forming a semiconductor layer on a substrate;
• forming a first semiconductor layer of a first transistor that outputs a driving current applied to a light-emitting device by doping fluorine ions in a first region of the semiconductor layer;
• forming a third semiconductor layer of a third transistor electrically connected to a second electrode and a gate electrode of the first transistor by doping phosphorus ions to a lower portion of a second region of the semiconductor layer;
• crystallizing the first semiconductor layer and the third semiconductor layer;
• and
• doping boron ions on an upper portion of the third semiconductor layer.

A method for manufacturing a display device comprising:

• forming a semiconductor layer on a substrate;
• forming a first semiconductor layer by doping fluorine ions in a first region of the semiconductor layer by a first mask, and blocking the doping of fluorine ions in a second region of the semiconductor layer;
• forming a third semiconductor layer and a fourth semiconductor layer by doping phosphorus ions in a second region of the semiconductor layer by a second mask, and blocking the doping of phosphorus ions in a first region of the semiconductor layer;
• crystallizing the first semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer;
• and
• doping boron ions on the third semiconductor layer and the fourth semiconductor layer by a third mask, and blocking the doping of boron ions on the first semiconductor layer,
• wherein an acceleration voltage applied to the phosphorus ions is greater than an acceleration voltage applied to the boron ions.