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US 2024/0268133 A1Published application
Memory device and memory system including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsTaehong KWON, Daeseok BYEON
Life of this patent
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Abstract
A memory device, including a first chip including a memory cell array; and a second chip bonded to the first chip and including a voltage generator configured to generate a voltage which is supplied to the memory cell array, wherein the second chip comprises a bonding pad connected to the voltage generator and bonded to an external charge pump.
Claims20
A memory device comprising:
- a first chip comprising a memory cell array;
- and
- a second chip bonded to the first chip and comprising a voltage generator configured to generate a voltage which is supplied to the memory cell array,
- wherein the second chip comprises a bonding pad connected to the voltage generator and bonded to an external charge pump.
1 more element
A memory device comprising:
- a first chip comprising a memory cell array;
- and
- a second chip bonded to the first chip;
- wherein the second chip comprises:
- a connection circuit supplied with an external voltage;
- and
- a voltage generator configured to generate a voltage which is supplied to the memory cell array based on the external voltage,
- wherein the connection circuit comprises:
- a plurality of bonding pads connected to the voltage generator, wherein each bonding pad of the plurality of bonding pads is bonded to a corresponding external charge pump from among a plurality of external charge pumps;
- a plurality of bonding pad switches configured to adjust a connection between the each bonding pad and the voltage generator;
- a wire pad connected to the voltage generator in parallel with the plurality of bonding pads, and connected to an external power management integrated circuit (PMIC);
- and
- a wire pad switch configured to adjust a connection between the wire pad and the voltage generator.
10 more elements
A memory system comprising:
- a memory controller;
- and
- a memory device configured to operate based on a command received from the memory controller,
- wherein the memory device comprises:
- a memory cell array;
- a connection circuit supplied with an external voltage;
- and
- a voltage generator configured to generate a voltage supplied to the memory cell array based on the external voltage,
- wherein the connection circuit comprises:
- a plurality of bonding pads connected to the voltage generator, wherein each bonding pad of the plurality of bonding pads is bonded to a corresponding external charge pump from among a plurality of external charge pumps;
- a plurality of bonding pad switches configured to adjust a connection between the each bonding pad and the voltage generator;
- a wire pad connected to the voltage generator in parallel with the plurality of bonding pads, and connected to an external power management integrated circuit (PMIC);
- and
- a wire pad switch configured to adjust a connection between the wire pad and the voltage generator.
11 more elements
Dependencies are inferred from the claim text.