Semiconductor device

A semiconductor device, comprising:

• a lower bonding structure that includes a lower substrate, a lower dielectric structure on the lower substrate, a memory cell structure between the lower substrate and the lower dielectric structure, and a first lower bonding pad in the lower dielectric structure;
• and
• an upper bonding structure that includes an upper dielectric structure on the lower dielectric structure, an upper substrate on the upper dielectric structure, a first transistor between the upper substrate and the upper dielectric structure, and a first upper bonding pad in the upper dielectric structure,
• wherein the first lower bonding pad is in contact with the first upper bonding pad,
• wherein the first transistor overlaps the memory cell structure, and
• wherein the first transistor is electrically connected to the memory cell structure through the first upper bonding pad and the first lower bonding pad.

A semiconductor device, comprising:

• a lower substrate;
• a lower dielectric structure on the lower substrate;
• a memory cell structure between the lower substrate and the lower dielectric structure, wherein the memory cell structure includes a bit line;
• an upper dielectric structure on the lower dielectric structure;
• an upper substrate on the upper dielectric structure;
• a transistor between the upper substrate and the upper dielectric structure;
• a connection dielectric structure on the upper substrate;
• a connection conductive structure in the connection dielectric structure;
• a lower bonding pad and an upper bonding pad that electrically connect the transistor to the bit line, wherein the lower bonding pad and the upper bonding pad are in contact with each other;
• and
• a through via that electrically connects the transistor to the connection conductive structure,
• wherein the transistor, the upper bonding pad, and the lower bonding pad overlap the memory cell structure, and
• wherein the through via penetrates the upper substrate.