Semiconductor memory device
AssigneeKioxia Corporation
InventorsMasaharu MIZUTANI, Masao SHINGU, Kensei TAKAHASHI
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Abstract
A semiconductor memory device according to an embodiment includes: a semiconductor layer extending in a first direction; a gate electrode layer including at least one metal element selected from a group consisting of tungsten (W), molybdenum (Mo), and cobalt (Co); a charge storage layer provided between the semiconductor layer and the gate electrode layer; and a first insulating layer provided between the charge storage layer and the gate electrode layer, the first insulating layer including a first region, the first region including aluminum (Al) and oxygen (O), the first insulating layer being in contact with the gate electrode layer.
Claims20
A semiconductor memory device comprising:
- a semiconductor layer extending in a first direction;
- a gate electrode layer including at least one metal element selected from a group consisting of tungsten (W), molybdenum (Mo), and cobalt (Co);
- a charge storage layer provided between the semiconductor layer and the gate electrode layer;
- and
- a first insulating layer provided between the charge storage layer and the gate electrode layer, the first insulating layer including a first region, the first region including aluminum (Al) and oxygen (O), the first insulating layer being in contact with the gate electrode layer.
A semiconductor memory device comprising:
- a semiconductor layer extending in a first direction;
- a gate electrode layer including at least one metal element selected from a group consisting of tungsten (W), molybdenum (Mo), and cobalt (Co);
- a charge storage layer provided between the semiconductor layer and the gate electrode layer;
- a first insulating layer provided between the charge storage layer and the gate electrode layer, the first insulating layer including a first region and a second region, the first region including aluminum (Al) and oxygen (O), the second region provided between the first region and the gate electrode layer, the first region being crystalline, the second region being amorphous;
- and
- a metal layer provided between the first insulating layer and the gate electrode layer, the metal layer being in contact with the second region and the gate electrode layer, the metal layer including titanium (Ti) and nitrogen (N).
Dependencies are inferred from the claim text.