Semiconductor device and a method of manufacturing the same

A semiconductor device comprising:

• a first active pattern and a second active pattern extending in a first direction and arranged in a second direction intersecting the first direction, each of the first and second active patterns including a first edge portion and a second edge portion spaced apart from each other in the first direction;
• a first storage node pad and a first storage node contact sequentially arranged on the first edge portion of the first active pattern;
• a second storage node pad and a second storage node contact sequentially arranged on the second edge portion of the second active pattern;
• a first closed spacer surrounding the first storage node contact in a plan view;
• and
• a second closed spacer surrounding the second storage node contact in a plan view.

A semiconductor device comprising:

• a first active pattern and a second active pattern extending in a first direction and arranged in a second direction intersecting the first direction, each of the first and second active patterns including first and second edge portions spaced apart from each other in the first direction and a center portion between the first and second edge portions;
• a pair of word lines extending in the second direction to intersect the first active pattern and the second active pattern;
• a first storage node pad and a first storage node contact sequentially provided on the first edge portion of the first active pattern;
• a second storage node pad and a second storage node contact sequentially provided on the second edge portion of the second active pattern;
• a first bit line on the first active pattern and extending in a third direction intersecting the first and second directions;
• a second bit line extending in the third direction on the second active pattern;
• a fence pattern between the first storage node contact and the second storage node contact;
• landing pads on the first storage node contact and the second storage node contact;
• and
• data storage patterns on the landing pads, wherein
• the first edge portion of the first active pattern and the first edge portion of the second active pattern are adjacent to each other in the second direction,
• the first edge portion of the first active pattern and the second edge portion of the second active pattern are adjacent to each other in the third direction, and
• each of the first and second storage node contacts includes a metal material.