Semiconductor structure and method for forming the same
AssigneeWinbond Electronics Corp.
InventorHuang-Nan CHEN
Life of this patent
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Abstract
A semiconductor structure is provided. The structure includes a substrate, first and second word lines, first and second storage capacitor contacts, a bit line, an insulating layer, and an inverted U-shaped isolation layer. The substrate has first and second active areas adjacent to each other, and the first and second word lines are formed in the substrate. The first and second storage capacitor contacts are respectively coupled to the first and second active areas, and disposed on the same side of the bit line. The bit line spans the first and second word lines. The insulating layer is formed between the first and second storage capacitor contacts. The inverted U-shaped isolation layer is formed in the insulating layer and spans the bit line.
Claims19
A semiconductor structure, comprising:
- a substrate having a first active area and an adjacent second active area;
- a first word line and a second word line, disposed in the substrate;
- a bit line spanning the first word line and the second word line;
- a first storage capacitor contact and a second storage capacitor contact, formed on the first word line and the second word line, respectively, to be coupled to the first active area and the second active area, respectively, wherein the first storage capacitor contact and the second storage capacitor contact are disposed on the same side of the bit line;
- an insulating layer disposed between the first storage capacitor contact and the second storage capacitor contact;
- and
- an inverted U-shaped isolation layer disposed in the insulating layer and spanning the bit line.
A method of forming a semiconductor structure, comprising:
- forming a first word line and a second word line that extend along a first direction and in a substrate, wherein the substrate has a first active area and an adjacent second active area;
- forming an insulating layer on the substrate;
- patterning the insulating layer to form a first opening, a second opening, and a third opening between the first opening and the second opening, wherein the first opening and the second opening correspond to the first active area and the second active area, respectively, and the third opening extends between the first word line and the second word line along the first direction, as viewed from a top-view perspective;
- forming an isolation layer in the third opening;
- and
- forming a first storage capacitor contact in the first opening and forming a second storage capacitor contact in the second opening.
Dependencies are inferred from the claim text.