Semiconductor light emitting device

A semiconductor light emitting device comprising:

• a plurality of first conductivity type semiconductor layers arranged on a substrate;
• a plurality of second conductivity type semiconductor layers formed on the plurality of first conductivity type semiconductor layers;
• a plurality of active layers between the plurality of first conductivity type semiconductor layers and the plurality of second conductivity type semiconductor layers;
• a plurality of electrode layers formed on top surfaces of the plurality of second conductivity type semiconductor layers;
• a plurality of reflective layers formed on parts of top surfaces of the plurality of electrode layers;
• a plurality of bonding pads formed on top surfaces of the plurality of reflective layers;
• an insulating layer formed on other parts of the top surfaces of the plurality of electrode layers;
• an insulating spacer conformally formed along a surface of the substrate, surrounding side walls of the plurality of first conductivity type semiconductor layers, the plurality of second conductivity type semiconductor layers, and the plurality of active layers, and covering a part of a side wall of the insulating layer;
• and
• an oxide layer contacting a side wall of each of the plurality of reflective layers,
• wherein the oxide layer does not horizontally overlap the insulating spacer,
• wherein the plurality of reflective layers includes a material that is not etched by an aqueous solution including one of tetramethyl ammonium hydroxide (TMAH), KOH, NaOH, and NH4OH, and the plurality of reflective layers include one of chrome (Cr), nickel (Ni), and a noble metal material, and
• wherein each of the plurality of bonding pads has a shell shape including a part of which the width gradually decreases as the part distances from each of the plurality of reflective layers.

A semiconductor light emitting device comprising:

• an n-type gallium nitride (GaN) layer;
• a p-type GaN layer including a plurality of protrusions apart from one another on the n-type GaN layer;
• a plurality of p-electrode layers formed on top surfaces of the plurality of protrusions;
• a plurality of reflective layers formed on parts of top surfaces of the plurality of p-electrode layers;
• a plurality of oxide layers formed on side walls of the plurality of reflective layers;
• a plurality of bonding pads formed on top surfaces of the plurality of reflective layers;
• an insulating layer formed on other parts of the top surfaces of the plurality of p-electrode layers;
• an insulating spacer conformally formed along a surface of the p-type GaN layer among the plurality of protrusions, surrounding side walls of the plurality of p-electrode layers, and covering side walls of the p-type GaN layers;
• and
• an n-electrode layer contacting an upper portion of the n-type GaN layer,
• wherein the plurality of reflective layers include one of chrome (Cr), nickel (Ni), gold (Au), platinum (Pt), palladium (Pd), and silver (Ag) and the plurality of reflective layers include a material that is not etched by an aqueous solution including one of tetramethyl ammonium hydroxide (TMAH), KOH, NaOH, and NH4OH, and
• wherein corners of top surfaces of the plurality of bonding pads are round.