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US 2024/0266473 A1Published application
Molybdenum carrier substrate for a surface-emitting ir-led device
AssigneeVishay Semiconductor GmbH
InventorPHILIPP LEBER
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Abstract
An optoelectronic semiconductor device includes a top contact and a conductive carrier including a metallic molybdenum conductive carrier substrate. A metal layer is deposited on the metallic molybdenum conductive carrier substrate. A light emitting film is disposed between the top contact, a mirror layer and the metallic molybdenum conductive carrier substrate.
Claims20
An optoelectronic semiconductor device, comprising:
- a top contact;
- a conductive carrier including a metallic molybdenum conductive carrier substrate;
- a metal layer deposited on the metallic molybdenum conductive carrier substrate;
- and
- a light emitting film, the light emitting film disposed between the top contact, a mirror system and the metallic molybdenum conductive carrier substrate.
2 more elements
A method of forming an optoelectronic semiconductor device, the method comprising:
- depositing a first metal layer onto a metallic molybdenum conductive carrier substrate;
- forming a mirror system on a gallium arsenide substrate layer;
- bonding the first metal layer to a second metal layer;
- removing at least a portion of the gallium arsenide substrate layer;
- and
- depositing one or more electrodes.
3 more elements
Dependencies are inferred from the claim text.