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US 2024/0266418 A1Published application
Thin film structure and electronic device including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSanghyun JO, Jinseong HEO, Hyangsook LEE, Sangwook KIM, Yunseong LEE
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Abstract
Disclosed herein is a thin film structure, including a first conductive layer on a dielectric layer including a plurality of layers. Each of the plurality of layers includes a dopant layer containing a dopant A and a HfO2layer to form a compound of HfxA1-xOz (0<x<1, z is a real number). An uppermost layer of the plurality of layers is thickest among the plurality of layers. The first conductive layer contacts the uppermost layer.
Claims16
A thin film structure, comprising:
- a dielectric layer including a plurality of layers to form a compound of HfxZr1-xOz, the plurality of layers including a first layer, a second layer on the first layer, and an uppermost layer over the second layer, and
- a first conductive layer on the dielectric layer, the first conductive layer directly contacting the uppermost layer of the plurality of layers in the dielectric layer,
- wherein
- in the compound of HfxZr1-xOz, 0<x<1, z is a real number,
- one of the first layer and second layer includes HfO2 and the other of the first layer and second layer includes ZrO2,
- the uppermost layer includes HfO2, and
- none of the plurality of layers in the dielectric layer are thicker than the uppermost layer of dielectric layer.
4 more elements
Dependencies are inferred from the claim text.