Semiconductor device

A semiconductor device, comprising:

• a substrate;
• a device isolation part on the substrate and defining active regions that are two-dimensionally disposed in a first direction and a second direction, the active regions each extending in the first direction;
• first and second word lines crossing the active regions in the second direction and adjacent to each other in the first direction;
• a first impurity region in an active region between the first and second word lines;
• a second impurity region in an active region at one side of the first word line and spaced apart from the first impurity region;
• at least one first conductive pad in contact with the first impurity region;
• at least one second conductive pad in contact with the second impurity region;
• a bit line on the at least one first conductive pad and extending in the first direction;
• and
• a storage node contact structure on the at least one second conductive pad,
• wherein:
• one of the active regions includes a first sidewall and a second sidewall that are opposite to each other, extend in the first direction, and are parallel to each other,
• the bit line, the at least one first conductive pad, and the at least one second conductive pad overlap the first sidewall and are spaced apart from the second sidewall, when viewed in a plan view, and
• the storage node contact structure overlaps the second sidewall and is spaced apart from the first sidewall when viewed in a plan view.

A semiconductor device, comprising:

• a substrate;
• a device isolation part on the substrate and defining active regions that are two-dimensionally disposed in a first direction and a second direction, the active regions each extending in the first direction;
• first and second word lines crossing the active regions in the second direction and adjacent to each other in the first direction;
• a word line capping pattern on each of the first and second word lines and buried in the substrate;
• a gate insulating layer between the first word line and the substrate;
• a first impurity region in an active region between the first and second word lines;
• a second impurity region in an active region at one side of the first word line and spaced apart from the first impurity region;
• a first conductive pad in contact with the first impurity region;
• a second conductive pad in contact with the second impurity region;
• a bit line on the first conductive pad and extending in the first direction;
• a storage node contact structure on the second conductive pad;
• a landing pad on the storage node contact structure;
• and
• a first bit line spacer and a second bit line spacer sequentially between the bit line and the storage node contact structure,
• wherein the active regions include a first active region and a second active region adjacent to each other in the second direction, and
• wherein a first distance between a first impurity region in the first active region and a second impurity region in the second active region is greater than a second distance between the first impurity region in the first active region and a first impurity region in the second active region.