Protrusion field-effect transistor and methods of making the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMarcus Johannes Henricus van Dal, Gerben Doornbos, Georgios Vallianitis
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Abstract
A transistor, an integrated semiconductor device, and methods of making the same are provided. The transistor includes a dielectric layer having a plurality of dielectric protrusions, a channel layer conformally covering the protrusions of the dielectric layer to form a plurality of trenches between two adjacent dielectric protrusion, a gate layer disposed on the channel layer. The gate layer 106 has a plurality of gate protrusions fitted into the trenches. The transistor also includes active regions aside the gate layer. The active regions are electrically connected to the channel layer.
Claims20
A transistor comprising:
- a dielectric layer having a plurality of dielectric protrusions;
- a channel layer conformally covering the plurality of dielectric protrusions and providing a plurality of trenches between each neighboring pair dielectric protrusions, wherein the channel layer has a laminated structure including multiple layers of metal oxide semiconductor materials;
- a gate layer disposed on the channel layer, wherein the gate layer has a plurality of gate protrusions fitted into the trenches;
- and
- active regions formed on either side of the gate layer, wherein the active regions are electrically connected to the channel layer.
A transistor comprising:
- a complementary metal-oxide-semiconductor (CMOS) circuit comprising field effect transistors and located on a substrate;
- interconnect-level dielectric material layers embedding metal interconnect structures and overlying the CMOS circuit;
- a dielectric layer overlying the interconnect-level dielectric material layers and having a plurality of dielectric protrusions;
- a channel layer conformally covering the plurality of dielectric protrusions to provide a plurality of trenches between each neighboring pair dielectric protrusions;
- a gate layer disposed on the channel layer, wherein the gate layer has a plurality of gate protrusions fitted into the trenches;
- and
- active regions formed on either side of the gate layer, wherein the active regions are electrically connected to the channel layer.
A field effect transistor comprising:
- a dielectric layer comprising a plurality of dielectric protrusions, wherein the plurality of dielectric protrusions comprise first ends proximal to a substrate and second ends distal from the substrate, and a width of the first ends is greater than a width of the second ends;
- a channel layer covering the plurality of dielectric protrusions and providing a plurality of trenches between neighboring pairs of the dielectric protrusions;
- a gate layer overlying the channel layer and comprising a plurality of gate protrusions fitted into the trenches;
- and
- active regions located on either side of the gate layer, wherein the active regions are electrically connected to the channel layer.
Dependencies are inferred from the claim text.