Semiconductor device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKwang-Young LEE, Jin Wook LEE
Life of this patent
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Abstract
A semiconductor device includes a source/drain pattern disposed on a substrate and a source/drain contact connected to the source/drain pattern. The source/drain contact includes a lower contact structure extending in a first direction and an upper contact structure protruding from the lower contact structure. The upper contact structure includes a first sidewall and a second sidewall facing away from each other in the first direction. The first sidewall of the upper contact structure includes a plurality of first sub-sidewalls, and each of the first sub-sidewalls includes a concave surface.
Claims15
A semiconductor device, comprising:
- a substrate;
- a lower pattern extending in a first direction on the substrate;
- a plurality of upper patterns on the lower pattern, and spaced apart from each other;
- a source/drain pattern disposed on the substrate, and connected to the upper patterns;
- a lower contact structure extending in a second direction intersecting the first direction, and connected to the source/drain pattern;
- an upper contact structure protruding from the lower contact structure, and comprising a first sidewall and a second sidewall facing away from each other in the second direction;
- and
- a contact insulating liner extending along the first sidewall of the upper contact structure,
- wherein the first sidewall of the upper contact structure comprises a plurality of first sub-sidewalls,
- wherein each of the first sub-sidewalls has a concave surface with respect to an interior of the upper contact structure, and
- wherein the first sub-sidewalls comprise a first sub-lower sidewall and a first sub-upper sidewall disposed on the first sub-lower sidewall, and a thickness of the contact insulating liner on the first sub-lower sidewall and a thickness of the contact insulating liner on the first sub-upper sidewall are different.
A semiconductor device, comprising:
- a substrate;
- a lower pattern extending in a first direction on the substrate;
- a plurality of upper patterns on the lower pattern, and spaced apart from each other;
- a source/drain pattern disposed on the substrate, and connected to the upper patterns;
- and
- a source/drain contact connected to the source/drain pattern,
- wherein the source/drain contact comprises a lower contact structure extending in a second direction intersecting the first direction and an upper contact structure protruding from the lower contact structure,
- wherein the upper contact structure comprises a first sidewall and a second sidewall facing away from each other in the second direction,
- wherein the first sidewall of the upper contact structure comprises a plurality of the first sub-sidewalls,
- wherein each of the first sub-sidewalls has a concave surface with respect to an interior of the upper contact structure,
- wherein the lower contact structure comprises a third sidewall and a fourth sidewall facing away from each other in the second direction, and
- wherein a first distance from a center line of the upper contact structure to the third sidewall and a second distance from the center line of the upper contact structure to the fourth sidewall are different.
Dependencies are inferred from the claim text.