Semiconductor device with improved junction termination extension

A method of manufacturing a semiconductor device, the method comprising the steps of:

• doping an epitaxial layer with dopants of a first conductivity type;
• partially embedding at least one junction termination extension (JTE), the JTE being a P doped ring in the epitaxial layer so that an upper surface of the at least one JTE is flush with an upper surface of the epitaxial layer, wherein the at least one JTE is doped with dopants of a second conductivity type different from the first conductivity type and at a higher doping concentration than a doping concentration of the epitaxial layer;
• and
• disposing a passivation layer containing a sufficient quantity of charge carriers of the second conductivity type on at least a part of an upper surface of the at least one JTE, so that the passivation layer is arranged to induce a surface charge density greater than 5E11 cm−2 of the first conductivity type on at least the part of the upper surface of the at least one JTE, by depleting an interior area of the at least one JTE of free charge carriers of the second conductivity type,
• wherein the at least one JTE is doped with the second type of charge carrier at a doping concentration in a range of 1E17 to 1E18 cm−3, and
• wherein the passivation layer is disposed so that the passivation layer contacts only regions of the at least one JTE having higher doping than other regions of the at least one JTE.