Light detection device and electronic apparatus

A light detection device comprising:

• a semiconductor layer having a photoelectric conversion region defined by an isolation region including a groove;
• and
• two transfer transistors provided in the photoelectric conversion region, wherein
• the isolation region includes a first portion and a second portion adjacent to each other with the semiconductor layer in between in plan view,
• the semiconductor layer between the first portion and the second portion includes a first side portion on a side of the first portion and a second side portion on a side of the second portion, and
• the first side portion and the second side portion are different in shape in cross-sectional view.

An electronic apparatus comprising:

• a light detection device;
• an optical lens configured to cause image light from a subject to be formed as an image on an imaging plane of the light detection device;
• and
• a signal processing circuit configured to apply signal processing to a signal outputted from the light detection device, wherein
• the light detection device includes a semiconductor layer having a photoelectric conversion region defined by an isolation region including a groove,
• the isolation region includes a first portion and a second portion adjacent to each other with the semiconductor layer in between in plan view,
• the semiconductor layer between the first portion and the second portion includes a first side portion on a side of the first portion and a second side portion on a side of the second portion, and
• the first side portion and the second side portion are different in shape in cross-sectional view.

An electronic apparatus comprising:

• a light detection device;
• an optical lens configured to cause image light from a subject to be formed as an image on an imaging plane of the light detection device;
• and
• a signal processing circuit configured to apply signal processing to a signal outputted from the light detection device, wherein
• the light detection device includes
• a semiconductor layer having a photoelectric conversion region defined by an isolation region including a groove, and
• two transfer transistors provided in the photoelectric conversion region,
• the isolation region includes a first portion and a second portion adjacent to each other with the semiconductor layer in between in plan view,
• the semiconductor layer between the first portion and the second portion includes a first side portion on a side of the first portion and a second side portion on a side of the second portion, and
• the first side portion and the second side portion are different in shape in cross-sectional view.